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| Ordering number : ENN3688B 2SC4710LS NPN Triple Diffused Planar Silicon Transistor 2SC4710LS 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features * * * * * Package Dimensions unit : mm 2079D [2SC4710LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=2100V). Small Cob(typical Cob=1.3pF). Wide ASO. High reliability(Adoption of HVP process). Full isolation package. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 123 14.0 0.7 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Ratings 2100 2100 5 10 30 2 150 --55 to +150 Unit V V V mA mA W C C 2.55 2.55 Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=2100V, IE=0 VEB=4V, IC=0 VCE=5V, IC=500A VCE=10V, IC=500A Ratings min typ max 1 1 10 6 60 MHz Unit A A 2.4 0.6 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11502 TS IM TA-3427 / 12099 HA (KT) / 73094 MT (KOTO) 8-7338 No.3688-1/3 2SC4710LS Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob Conditions IC=1mA, IB=200A IC=1mA, IB=200A IC=10A, IE=0 IC=100A, RBE= IE=10A, IC=0 VCB=100V, f=1MHz 2100 2100 5 1.3 Ratings min typ max 5 2 Unit V V V V V pF Collector Current, IC -- mA Collector Current, IC -- A 800 A 35 A 40 A 45 25A 20A 2000 50 30A A 1000 IC -- VCE A 10 IC -- VCE 4 A 1 1600 A 1800 8 A 1200 00A A 1000 A 800 600A 400A 600 6 15A 400 4 200A 100A 10A 200 5A 2 50A 0 0 2 4 6 IB=0 8 10 ITR07475 0 0 2 4 6 8 IB=0 10 ITR07476 Collector-to-Emitter Voltage, VCE -- V 100 7 5 hFE -- IC Ta =1 2 Collector-to-Emitter Voltage, VCE -- V 5 VCE(sat) -- IC VCE=5V IC / IB=5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0C 3 2 DC Current Gain, hFE 3 2 25C --40C 1.0 7 5 3 2 10 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 25C Ta=120C --40C 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 ITR07478 0.1 Collector Current, IC -- mA 10 7 7 10 2 ITR07477 12 VBE(sat) -- IC IC / IB=5 Collector Current, IC -- mA Collector Current, IC -- mA IC -- VBE(ON) VCE=5V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 10 8 Ta=120C 0 0.4 0.6 6 1.0 7 5 3 2 3 5 7 0.1 Ta= --40C 25C 4 120C 2 0 2 3 5 7 1.0 2 3 25C --40C 0.8 1.0 Collector Current, IC -- mA 5 7 10 2 ITR07479 0.2 1.2 1.4 Base-to-Emitter ON Voltage, VBE(on) -- V ITR07480 No.3688-2/3 2SC4710LS 10 fT -- IC VCE=10V 10 7 Cob -- VCB f=1MHz Gain-Bandwidth Product, f T -- MHz 7 5 Output Capacitance, Cob -- pF 5 3 2 3 2 1.0 7 5 3 5 7 0.1 2 3 5 7 1.0 7 5 Collector Current, IC -- mA 5 3 2 2 1.0 ITR07481 2.4 5 1.0 23 5 10 23 5 100 23 5 ASO ICP=30mA IC=10mA PT50s 10 0 s Collector-to-Base Voltage, VCB -- V 1000 2 ITR07482 PC -- Ta 10 7 5 3 2 1.0 7 5 3 2 0.1 5 Collector Dissipation, PC -- W 2.0 Collector Current, IC -- mA s 1m ms 10 op er ati on DC 1.6 No 1.2 he at sin k 0.8 0.4 Tc=25C Single pulse 7 100 2 3 5 7 1000 2 3 5 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V ITR07483 Ambient Temperature, Ta -- C ITR07484 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS No.3688-3/3 |
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